Thin Films Deposition from Hexamethyldisiloxane and Hexamethyldisilazane under Dielectric-Barrier Discharge (DBD) Conditions |
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Authors: | Schmidt-Szalowski K. Rżanek-Boroch Z. Sentek J. Rymuza Z. Kusznierewicz Z. Misiak M. |
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Affiliation: | (1) Faculty of Chemistry, Warsaw University of Technology, Warszawa, Poland;(2) Faculty of Mechatronical Engineering, Warsaw University of Technology, Warszawa, Poland |
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Abstract: | Hexamethyldisiloxane (HMDSO) and hexamethyldisilazane (HMDSN) were used as organosilicon reagents for PE-CVD of thin films under filamentary barrier-discharge conditions at atmospheric pressure. Efficient discharges were obtained in the region of moderate frequencies (5 kHz). The following mixtures of organosilicon reagents with carrier gas and oxidants or ammonia were investigated: HMDSO+Ar, HMDSO+N2, HMDSO+O2+Ar, HMDSO+N2O+Ar, and HMDSN+NH3+N2. Under such conditions HMDSO was converted to produce thin films (10–1000 nm) of silicon oxide, generally containing admixtures of residual organic content (Si—CHn and Si—H groups). The films deposited from HMDSN+NH3+N2 contained silicon, nitrogen and oxygen. |
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Keywords: | PE-CVD filamentary discharge SiO2 HMDSO HMDSN TEOS |
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