Large melting-point hysteresis of Ge nanocrystals embedded in SiO2 |
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| Authors: | Xu Q Sharp I D Yuan C W Yi D O Liao C Y Glaeser A M Minor A M Beeman J W Ridgway M C Kluth P Ager J W Chrzan D C Haller E E |
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| Affiliation: | Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA. |
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| Abstract: | The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy. |
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