Electrical switching and memory phenomena ino-tolidine DDQ under pressure |
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| Authors: | T Ravindran S V Subramanyam |
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| Institution: | (1) Department of Physics, Indian Institute of Science, 560 012 Bangalore, India |
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| Abstract: | Electrical switching has been observed ino-tolidine-DDQ at pressures of 7.66 GPa and fields ∼3×105
V/m withσ
ON/σ
OFF≈103 at a temperature of 300 K. The switching is found to be of the memory type and the sample can be driven back to the low conducting
state by applying ac pulses of sufficient magnitude but independent of frequency. |
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| Keywords: | High pressure non-ohmic conduction electrical switching |
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