Kinetic equations and nanocrystal growth in molecular beam epitaxy methods

The processes of nucleation and growth of GaN, Ge, and InAs nanoclusters in molecular beam epitaxy (conventional and nitrogen-ion-assisted) have been investigated by computer simulation methods. Physical models are proposed to explain the regularities of nanostructure evolution, depending on the epitaxy conditions. The role of nitrogen-ion irradiation, leading to radical changes in the epitaxial growth regime, is revealed.