Distributions of the implanted impurity and energy release in high-energy ion implantation |
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| Authors: | F F Komarov I E Mozolevskii P P Matus S É Ananich |
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| Institution: | (1) Institute of Applied Physics Problems, 220064 Minsk, Belorussia;(2) Belorussian State University, 220050 Minsk, Belorussia;(3) Institute of Mathematics, Academy of Sciences of Belorussia, 220072 Minsk, Belorussia |
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| Abstract: | A new model for high-energy ion implantation is proposed, based on the use of the Fokker-Planck equation. An efficient algorithm
of the adaptive type is devised for the numerical solution of the problem. A simulation of the implantation of boron in silicon
is carried out for energies ranging from 10 to 100 MeV. Good agreement is obtained with the experimental data and the results
of Monte Carlo simulations.
Zh. Tekh. Fiz. 67, 61–67 (January 1997) |
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