A simplified analysis of the electronic contribution to the elastic constants in ultrathin films of stressed semiconductors under magnetic quantization |
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| Institution: | 1. Semiconductor Device Laboratory, Department of Electronic Science, University of Calcutta, University College of Science and Technology, 92, A.P.C. Road, Calcutta 700 009, India;2. Department of Radio Physics and Electronics, University of Calcutta, University College of Science and Technology, 92, A.P.C. Road, Calcutta 700 009, India;3. Department of Applied Physics, University of Calcutta, University College of Science and Technology, 92, A.P.C. Road, Calcutta 700 009, India |
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| Abstract: | An attempt is made to study the electronic contribution to the second- and third-order elastic constants in ultrathin films of strained semiconductors under magnetic quantization in the presence of broadening on the basis of a newly formulated electron dispersion law. It is found, taking stressed n-InSb as an example, that the carrier contribution to the second- and third-order elastic constants oscillates with increasing carrier degeneracy and decreasing film thickness, respectively, in different manners and the stress enhances their numerical values. A relationship between the said contributions and the thermoelectric power has been derived for quantum confined semiconductors having arbitrary dispersion laws and our analysis agrees quite well with the suggested relationship. |
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