Spin-tunneling time in a hybrid semimagnetic/semiconductor heterostructure with a single paramagnetic layer

We investigate spin-dependent tunneling times in a hybrid semimagnetic/semiconductor heterostructure with a single paramagnetic layer under the influence of both electric and magnetic fields. We find that the tunneling times for electrons strongly depend on the incident energy, the magnitude of the external fields, and on their spin orientation. The results indicate that the tunneling time for spin-up electrons can be longer than that for spin-down ones by up to several orders of magnitude. This implies that tunneling for spin-up and spin-down electrons are separated in time within the same heterostructure.