| Abstract: | The effects of composition, orientation and temperature of substrate on the structure and morphology of epitaxial CdSe and ZnTe films are analyzed. Single crystal wafers of zinc telluride and zinc selenide oriented along (110) and natural cleaved mica were used as substrates. This paper presents a complex investigation of the growth mechanism and crystal perfection of the films by optical microscopy, X-ray and electron diffraction, and by electron microscopy. The structure of the transient region of the film substrate interface was studied by X-ray microanalyzer and by scanning electron microscope. Cadmium selenide layers grown on mica had hexagonal structure and were oriented in the (0001) plane, those grown on zinc telluride crystals had cubic structure and orientation along (110). Zinc telluride layers were cubic and were oriented parallel the (111) plane when deposited on mica, and parallel to (110) when deposited on zinc selenide substrates. It is shown that the layers grew by a layer mechanism. Epitaxial growth of cubic cadmium selenide layers on zinc telluride single crystals, as well as of ZnTe layers on ZnSe substrates, made it possible to grow heterojunctions with a low density of misfit dislocations at the interface; this gave rise to intensive injection electroluminescence and effective separation of non-equilibrium charge carriers in such structures. |
