| Abstract: | Based on the temperature dependence of the layer growth rate influence on the incorporation of dopants into epitaxial silicon the range of validity of an incorporation equilibrium between dopants in the gas phase and in the layer is discussed. Additional to the borderline case of an infinitely low layer growth rate the incorporation equilibrium is equally important to high layer deposition temperature. For this region deducing the incorporation enthalpy from the temperature dependence of the incorporation of dopants proves adequate. |
