Double-crystal Topographic Investigation of the Shape of Silicon Wafers after Oxidation

The shape of silicon wafers plastically deformed by slip band production during an oxidation process is investigated with double-crystal topography. In dependence on the Burgers vector of the slip band dislocations the tilt of parts of the wafer, especially between crossed slip bands, is observed and the wafer is curved in general. A local quantitative determination of the radius of curvature is possible.