Ihnomogeneous Distribution of Doping Elements in Polycrystalline GaP

The distribution of Te and Zn in polycrystalline GaP ingots grown by SSD method was studied by means of the contact resistance measurements between a tungsten carbide probe and a lapped sample surface. The differencies in carrier concentrations measured in differently oriented GaP :Te crystal grains were found as high as one order of magnitude. In GaP: Zn crystals the constant Zn concentration throughout the sample was observed.