| Abstract: | The influence of thermal annealing on the image contrast of the boundaries of 49BF2+-implanted regions in Si is investigated by means of X-ray topography. The contrast is used for studying the wafer bending and the stress types. It is shown that the final state of deformation is determined by: (1) the expansion of the surface layer caused by the implantation, (2) the contraction of this layer caused by the annealing. Effect (1) or (2) dominates depending on the implantation dose and annealing conditions. The possibility of compensating both effects leading to complete elimination of the bending of the implanted wafers is established. The results are discussed on the basis of the correlation between the deformation state of the wafers and the percentage B atoms occupying substitutionally Si-lattice sites. |
