The influence of silicon on the crystallographic phases of the niobium-gallium system studied by x-ray diffraction methods

The influence of silicon on the crystallographic phases of the binary niobium-gallium system is studied by X-ray diffraction methods. The samples were prepared by rapid quenching. Silicon substituted gallium in all phases of the binary system. It exists a complete pseudobinary solid solution Nb₅Ga₃-Nb₅Si₃. The maximum degree of substitution in the A 15 phase Nb₃Ga_1–xSi_x is x = 0.5. The presence of two A 15 phases with different cell parameters indicates the existence of a miscibility gap. Contrary to the expections the supercondusting transition temperatures decreases with an increasing degree of substitution.