Effect of pressure on turnover behaviour inI–V characteristic curves in GeTeSe chalcogenide glass |
| |
Authors: | M K El-Mansy M M El-Zaidia E Abo El-Hassan A A Ammar |
| |
Institution: | (1) Faculty of Science, Zagazig University, Banha, Egypt;(2) Faculty of Science, Monoufia University, Shebin El-Koom, Egypt |
| |
Abstract: | Summary Thick layers of GeTeSe chalcogenide glass have been prepared and subjected to conduction measurements under the effect of
both temperature and pressure. The results of theI–V characteristics exhibit transition from high-resistance state to differential negative resistance state through a turnover
point. The application of uniaxial pressure shows the similar effect of temperature on that behaviour. Both current and voltage
at the turnover point depend on pressure and ambient temperature. The rise of temperature in the conduction path due to joule
heating and application of uniaxial pressure as well as the reduction in the energy gap width (β=2.87·10−12eV/N m−2) are estimated and discussed at the turnover point. This behaviour is explained according to the orientation of dipoles randomly
dispersed in viscous amorphous matrix. |
| |
Keywords: | Conductivity of specific semiconductors and insulators |
本文献已被 SpringerLink 等数据库收录! |