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Examination of photoproducts in the ablation plume of doped PMMA
Authors:E Rebollar  M Oujja  M Castillejo  S Georgiou
Institution:(1) Institute of Physical Chemistry Rocasolano, CSIC, Serrano 119, 28006 Madrid, Spain;(2) Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, P.O. Box 1527, 71110 Heraklio, Crete, Greece
Abstract:Optical emission and laser-induced fluorescence spectroscopies (OES and LIF) are employed to examine the plume ejected into vacuum upon UV pulsed laser ablation (248 nm, 20 ns, and 266 nm, 5 ns) of poly(methyl methacrylate) PMMA films doped with photostable compounds naphthalene (NapH) and phenanthrene (PhenH), and their photolabile iodide derivatives iodonaphthalene (NapI) and iodophenanthrene (PhenI). Spontaneous emissions observed in the irradiation of NapI and PhenI sensitised films can be assigned to excited products resulting from photodissociation of the dopants and to excited C2, CH, and CN radicals. The presence in the plume of ground state products is revealed by LIF upon excitation at 266 nm. Measurements of the dependence of the spontaneous and LIF emissions on distance to the surface, ablation fluence, and flight velocities of species are discussed with reference to the mechanistic implications derived from the measurements. PACS 52.38.Mf; 61.82.Pv; 82.50
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