| Si2N2O基体铌酸锂调制器有限元法研究 |
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| 引用本文： | 李九生.Si2N2O基体铌酸锂调制器有限元法研究[J].光子学报,2006,35(1):37-40. |
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| 作者姓名： | 李九生 |
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| 作者单位： | 浙江大学信息学院光及电磁波研究中心,杭州,310027 |
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| 基金项目： | 中国科学院资助项目
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中国博士后科学基金
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教育部重点实验室基金 |
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| 摘 要： | 提出一种新型基于Si2N2O基体的LiNbO3行波调制器，利用有限元方法对该调制器进行数值分析并获得调制器的优化结构尺寸.该新型调制器带宽达到120 GHz,半波电压为3.5 V,特性阻抗为50.2 Ω.结果表明该调制器具有大的调制带宽和良好的阻抗匹配,在未来光通信中具有很好的应用前景.
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| 关 键 词： | 有限元法 调制器 铌酸锂 Si2N2O |
| 收稿时间： | 2004-10-26 |
| 修稿时间： | 2004年10月26 |
Research on Lithium Nobate Modulator Based on Si2N2O Substrate by Finite Element Method |
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| Li Jiusheng.Research on Lithium Nobate Modulator Based on Si2N2O Substrate by Finite Element Method[J].Acta Photonica Sinica,2006,35(1):37-40. |
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| Authors: | Li Jiusheng |
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| Institution: | Centre for Optical and Electromagnetic Research, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027 |
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| Abstract: | A novel LiNbO3 modulator based on Si2N2O substrate is proposed. Using the finite element method,the proposed modulator has been analyzed. The optimum structure parameters of the novel modulator are obtained. The modulator operates with a 3 dB optical bandwidth of 120 GHz,a half-wave driving voltage of 3.5 V,and characteristic impedance of 50.32Ω. The results show that broad bandwidth and low half-wave voltage can be achieved simultaneously. It is a promising candidate for future ultra-high-speed optical fiber transmission system. |
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| Keywords: | Finite element method Modulator Lithium noibate Si_2N_2O |
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