Synthetic Semiconductor Diamond Electrodes: Electrochemical Characteristics of Individual Faces of High-Temperature-High-Pressure Single Crystals |
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| Authors: | Yu V Pleskov Yu E Evstefeeva M D Krotova V Ya Mishuk V A Laptev Yu N Pal'yanov Yu M Borzdov |
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| Institution: | (1) Russian Academy of Sciences, Frumkin Institute of Electrochemistry, Leninskii pr. 31, Moscow, 119071, Russia;(2) All-Russian Research Institute of Synthesis of Mineral Raw Materials, Aleksandrov, Vladimir oblast, 601600, Russia;(3) Siberian Division, Russian Academy of Sciences, Institute of Mineralogy and Petrography, Universitetskii pr. 3, Novosibirsk, 630090, Russia |
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| Abstract: | Effects of crystal structure on the electrochemistry of boron-doped high-temperature-high-pressure diamond single crystals grown from an Ni–Fe–C–B melt are studied. On the {111}, {100}, and {311} faces, the linear and nonlinear electrochemical impedance spectra and the electrochemical kinetics in the Fe(CN)6
3_/4_ redox system are measured. The acceptor concentration in the diamond interior adjacent to these faces was determined from the Mott–Schottky plots and the amplitude-demodulation measurements. It varies in the 1018 to 1021 cm–3 range. The difference in the electrochemical behavior of individual crystal faces is primarily attributed to different boron acceptor concentrations in the growth sectors associated with the faces. |
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