In-band pumping of Nd-vanadate thin-disk lasers |
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| Authors: | N Pavel C Kränkel R Peters K Petermann G Huber |
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| Institution: | 1. Laboratory of Solid-State Quantum Electronics, National Institute for Laser, Plasma and Radiation Physics, Bucharest, 077125, Romania
2. Institut für Laser Physik, Universit?t Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany
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| Abstract: | We investigate the output performance of the 1.06 μm 4F3/2→4I11/2 transition in Nd:GdVO4 and Nd:YVO4 thin-disk lasers under multi-pass pumping with diode lasers at 0.81 μm and at 0.88 μm, which corresponds to direct in-band pumping of the 4F3/2 emitting level. The use of a pump module with 24 passes through the crystal allowed the realization of an in-band pumped Nd:GdVO4 thin-disk laser with 14.9 W of continuous wave (cw) output power at 1.06 μm; the overall optical-to-optical efficiency was 0.50 and the slope efficiency with respect to the incident pump power was 0.52. Intracavity frequency-doubling of the Nd:GdVO4 thin-disk laser with a LiB3O5 (LBO) nonlinear crystal yielded 9.1 W of cw output power in the green at 0.53 μm with an overall optical-to-optical efficiency of 0.31. |
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