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应用多光子非线性Compton散射模型和分段电流密度卷积时域有限差分法,将入射光和Compton 散射光作为形成缺陷模的机制,研究了Compton散射对具有单一缺陷模的时变磁化等离子体光子晶体缺陷模的影响.结果表明:与Compton散射前相比,入射光频率低于等离子体频率时,禁带中仍存在明显的缺陷模,其频率随等离子体驰豫时间的增大而缓慢增大；等离子体弛豫时间相等时,等离子体均匀分布的禁带透射系数峰值比Epstein分布时小,两者的缺陷模特征都比较明显,但两者的禁带宽度及缺陷模之间的区别明显减小.

Influence of Compton scattering on the defect mode in time-varying magnetized plasma photonic crystals

Using the model of the multi-photon nonlinear Compton scattering and the parts electric current density cirrus finite-different time-domain method(PLCDRC-FDTD), a new mechanism of the defect mode formed by the incident light and Compton scattering optical is given out, and the influences of Compton scattering on the defect mode in the one-dimension time-varying magnetized plasma photonic crystals with a defect layer are studied. The results show that comparing those before Compton scattering, when the incident light frequency is lower than the plasma frequency, the clear defect modes are taken place in the band gap, the frequencies of the defect mode are slowly increased along with the increasing of the plasma relaxation times. Under the plasma relaxation times are the same, the band gap transmission coefficient crests of the even plasma are smaller than those of the Epstein distribution plasma, their defect mode characteristics are clearer, but the band gap widths and defect mode characteristics are clearly decreased between the even plasma and Epstein distribution.