| 磁控溅射制备择优取向氮化铝薄膜 |
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| 引用本文： | 许小红,武海顺,张聪杰,金志浩.磁控溅射制备择优取向氮化铝薄膜[J].应用化学,2000,17(4):411-0. |
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| 作者姓名： | 许小红 武海顺 张聪杰 金志浩 |
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| 作者单位： | 陕西师范大学，西安交通大学 |
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| 基金项目： | 国家自然科学基金! (2 97410 0 4)，山西省自然科学基金，山西省回国留学人员基金!资助课题 |
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| 摘 要： | AlN薄膜;磁控反应溅射;磁控溅射制备择优取向氮化铝薄膜;晶面取向;X射线衍射
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| 关 键 词： | AlN薄膜 磁控反应溅射 磁控溅射制备择优取向氮化铝薄膜 晶面取向 X射线衍射 |
| 收稿时间： | 2009-06-29 |
| 修稿时间： | 2009-06-29 |
Preparation of Preferentially Orientated AlN Thin Films by DC Magnetron Sputtering |
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| XU Xiao-Hong,WU Hai-Shun,ZHANG Cong-Jie,JIN Zhi-Hao.Preparation of Preferentially Orientated AlN Thin Films by DC Magnetron Sputtering[J].Chinese Journal of Applied Chemistry,2000,17(4):411-0. |
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| Authors: | XU Xiao-Hong WU Hai-Shun ZHANG Cong-Jie JIN Zhi-Hao |
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| Abstract: | Aluminium nitride AlN(100) thin films have been successfully deposited on Si(111) substrates by reactive magnetron sputtering technique. The films have been characterized by XRD to determine their crystalline preferential orientation. The results show that the experimental parameters including total pressure of working gas(N 2 Ar), N 2 partial pressure, target power and the distance from target to substrate affected crystal orientation, deposition rate, and grain size of AlN thin film. The effects of sputtering time and the substrate temperature on AlN film structure have also been investigated. The optimum experimental parameters for AlN(100) thin film deposition are given. |
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| Keywords: | aluminium nitride thin film preparation magnetron reactive sputtering crysta lline orientation X ray diffraction |
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