首页 | 本学科首页   官方微博 | 高级检索  
     检索      

镓(Ga)的含量及分布对CIGS薄膜电池量子效率的影响
引用本文:李伟,孙云,刘伟,李凤岩,周琳.镓(Ga)的含量及分布对CIGS薄膜电池量子效率的影响[J].人工晶体学报,2006,35(1):131-134.
作者姓名:李伟  孙云  刘伟  李凤岩  周琳
作者单位:南开大学光电子薄膜器件与技术研究所,天津,300071;天津市光电子薄膜器件与技术重点实验室,天津,300071;南开大学光电子薄膜器件与技术研究所,天津,300071
基金项目:国家863计划项目(No.2004AA513020)
摘    要:采用两步法制备CuGaxIn1-xSe2薄膜,Cu-In-Ga金属预制层采用铜镓合金靶及铟靶通过磁控溅射方法沉积而成,采用固态源硒化法在硒蒸气密闭环境中硒化,通过调整镓(Ga)比例及分布控制CIGS薄膜的带隙,采用镓元素梯度分布,使CIGS薄膜带隙呈现抛物线状分布,电池的量子效率得到明显提高,制备出的CIGS薄膜电池开路电压与转换效率都得到很大程度的改善,电池最高转换效率已达9.4;.

关 键 词:镓梯度分布  铜铟镓硒太阳电池  固态源硒化法  量子效率  
文章编号:1000-985X(2006)01-0131-04
收稿时间:2005-07-11
修稿时间:2005-07-11

Effects of Proportion and Distribution of Gallium on Quantum Efficiency of CIGS Thin Film Solar Cell
LI Wei,SUN Yun,LIU Wei,LI Feng-Yan,ZHOU Lin.Effects of Proportion and Distribution of Gallium on Quantum Efficiency of CIGS Thin Film Solar Cell[J].Journal of Synthetic Crystals,2006,35(1):131-134.
Authors:LI Wei  SUN Yun  LIU Wei  LI Feng-Yan  ZHOU Lin
Institution:1. Institute of Photo-electronics Thin Fill Devices and Technique, Nankai University. Tianjin 300071, China; 2. Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Tianjin 300071, China
Abstract:The CIGS thin films were deposited by the two-step growth process using sputtering and selenization system on Mo-coated soda lime glass substrates.The solid selenium was used as Se source instead of H_2Se because of its toxicity.Many films with various kinds of gallium content grades in CIGS absorber were fabricated and investigated.We found that it is possible to prepare a CIGS thin film to improve the efficiency and voltage in the same device by appropriate grading.Band gap grading was achieved by compositional Ga/(ln Ga) profiling as a function of depth.The quantum efficiency reveals that the optimization of gallium grading has a great influence on the performance of CIGS solar cells.The best solar cell with an active area of 1.2cm~2 and the double profiling band gap structure gained the highest efficiency of 9.4%.
Keywords:gallium grading  CIGS solar cell  selenization  quantum efficiency  
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《人工晶体学报》浏览原始摘要信息
点击此处可从《人工晶体学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号