f Electron contribution to the change of electronic structure in CeRu2Si2 with temperature: a Compton scattering study |
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Authors: | Koizumi A Motoyama G Kubo Y Tanaka T Itou M Sakurai Y |
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Institution: | Graduate School of Material Science, University of Hyogo, Hyogo 678-1297, Japan. |
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Abstract: | High resolution Compton profiles have been measured in the single crystal of CeRu(2)Si(2) above and below the Kondo temperature to elucidate the change of the Ce-4f electron from localized to itinerant states. Two-dimensional electron occupation number densities projected on the first Brillouin zone, which are obtained after a series of analyses, clearly specify the difference between itinerant and localized states. The contribution of Ce-4f electrons to the electronic structure is discussed by contrast with a band calculation. |
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