New mechanism for positronium formation on a silicon surface |
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Authors: | Cassidy D B Hisakado T H Tom H W K Mills A P |
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Affiliation: | Department of Physics and Astronomy, University of California, Riverside, California 92521-0413, USA. |
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Abstract: | We describe experiments in which positronium (Ps) is emitted from the surface of p-doped Si(100), following positron implantation. The observed emission rate is proportional to a Boltzmann factor exp{-E(A)/kT}, which is dependent on the temperature T of the sample and a characteristic energy E(A)=(0.253±0.004) eV. Surprisingly, however, the Ps emission energy has a constant value of ~0.16 eV, much greater than kT. This observation suggests the spontaneous emission of energetic Ps from a short-lived metastable state that becomes thermally accessible to available surface electrons once the positron is present. A likely candidate for this entity is an electron-positron state analogous to the surface exciton observed on p-Si(100) c(4×2) by Weinelt et al. [Phys. Rev. Lett. 92, 126801 (2004)]. |
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