Nonparabolic multivalley balance-equation approach to impact ionization: Application to wurtzite GaN |
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Authors: | JC Cao XL Lei |
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Institution: | (1) China Center of Advanced Science and Technology (World Laboratory) P.O. Box 8730, Beijing 100080, P.R. China State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P.R. China, CN |
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Abstract: | Extended nonparabolic multivalley balance equations including impact ionization (II) process are presented and are applied
to study electron transport and impact ionization in wurtzite-phase GaN with a , L-M, and conduction band structure at high electric field up to 1000kV/cm. Hot-electron transport properties and impact ionization
coefficient are calculated taking account of the scatterings from ionized impurity, polar optical, deformation potential,
and intervalley interactions. It is shown that, for wurtzite GaN when the electric field approximately equals 530kV/cm, the
II process begins to contribute to electron transport and results in an increase of the electron velocity and a decrease of
the electron temperature, in comparison with the case without the II process. Similar calculations for GaAs are also carried
out and quantitative agreement is obtained between the calculated II coefficients by this present approach and the experimental
data. Relative to GaAs, GaN has a higher threshold electric field for II and a smaller II coefficient.
Received: 27 April 1998 / Revised: 17 July 1998 / Accepted: 13 August 1998 |
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Keywords: | PACS 72 10 -d Theory of electronic transport scattering mechanisms - 72 20 Ht High-field and nonlinear effects - 72 20 Jv Charge carriers: generation recombination lifetime and trapping |
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