Photo-assisted electron injection at a semiconductor—NH3 interface |
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| Authors: | CE Krohn JC Thompson |
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| Institution: | Physics Department, The University of Texas at Austin, Austin, Texas 78712, USA |
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| Abstract: | Illumination of a p-type semiconductor—NH3 interface (or heterojunction) with photons of energy greater than the semiconductor band gap causes electrons to be injected into the NH3. There is no hole injection at a n-type electrode. Suggestions are made for the required energy levels in the liquid. |
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