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Physical properties of hydrogenated amorphous gallium arsenide |
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| Authors: | A. Carbone F. Demichelis G. Kaniadakis F. Gozzo R. Murri N. Pinto L. Schiavulli G. Della Mea A. Drigo A. Paccagnella |
| Affiliation: | (1) Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italia;(2) Dipartimento di Matematica e Fisica, Università di Camerino Via, Madonna del Carcere, 62032 Camerino, Italia;(3) Dipartimento di Fisica, Università di Padova, Via Marzolo, Padova, Italia |
| Abstract: | Summary The elemental composition and the optical properties of hydrogenated amorphous GaAs prepared by r.f. reactive sputtering at different hydrogen and argon pressure and substrate temperature have been determined. From the dependence of the absorption coefficient on photon energy the optical gap has been deduced according to the Tauc law. The data obtained for stoichiometric samples are compared with similar data obtained by different authors. The influence of various deposition parameters on stoichiometry and on the optical properties is briefly discussed. |
| Keywords: | Conductivity of specific semiconductors and insulators |
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