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Siliconization for Wall Conditioning in the HL-2A Tokamak
作者姓名:CAO  Zeng  CUI  Chenghe  CAI  Xiao  GAO  Xiaoyan  DUAN  Xuru  PAN  Yudong  LI  Quang
摘    要:

关 键 词:硅化  流量改变  密度极限  HL-2A  托卡马克装置

Siliconization for Wall Conditioning in the HL-2A Tokamak
CAO Zeng CUI Chenghe CAI Xiao GAO Xiaoyan DUAN Xuru PAN Yudong LI Quang.Siliconization for Wall Conditioning in the HL-2A Tokamak[J].Southwestern Institute of Physics Annual Report,2005(1):43-44.
Abstract:The sputtering of impurities is caused by the interactions between plasma and the first wall, and the recycling of the gas affects the particle and energy transport of plasmas with a complicated mechanism in plasma operation. It is important for present tokarnaks to achieve a good confinement and high performance plasmas by means of controls of the vacuum condition, usage of low Z materials, control of the recycling of neutral particles and suppressions of the appearances and yield of impurities. For higher plasma parameters, some of the first wall of HL-2A is covered with graphite materials and carbon fiber tiles. Hence the studies on the in-situ coating application and development, and the interactions between the coating film and plasma are needed to effectively control the impurity, improve plasma confinement and achieve high performance plasma.
Keywords:Siliconization Discharge improvement Density limits
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