| InP基共振遂穿二极管器件（RTD）研究 |
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| 引用本文： | 韩春林,陈辰,邹鹏辉,张杨,曾一平,薛舫时,高建峰,张政,耿涛.InP基共振遂穿二极管器件（RTD）研究[J].半导体学报,2009,30(6):064001-3. |
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| 作者姓名： | 韩春林 陈辰 邹鹏辉 张杨 曾一平 薛舫时 高建峰 张政 耿涛 |
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| 作者单位： | State;Laboratory;Monolithic;Integrated;Circuits;Modules;Nanjing;Electronic;Devices;Institute;Semiconductors;Chinese;Academy;Sciences; |
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| 摘 要： | 我们在实验中对InGaAs/AlAs/InP共振遂穿二极管（RTD）材料结构进行了优化设计，并用MBE设备在(100)半绝缘InP单晶片上生长了RTD外延材料。我们采用电子束光刻工艺和空气桥互连技术，制作了InP基RTD器件。并在室温下测试了器件的电学特性：峰值电流密度24.6kA/cm2，峰谷电流比(PVCR)为8.6。
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| 关 键 词： | 共振遂穿二极管、电子束光刻、空气桥 |
| 收稿时间： | 6/11/2008 9:48:52 AM |
| 修稿时间： | 2/13/2009 6:39:36 PM |
InP-base resonant tunneling diodes |
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| Han Chunlin,Chen Chen,Zou Penghui,Zhang Yang,Zeng Yiping,Xue Fangshi,Gao Jianfeng,Zhang Zheng and Geng Tao.InP-base resonant tunneling diodes[J].Chinese Journal of Semiconductors,2009,30(6):064001-3. |
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| Authors: | Han Chunlin Chen Chen Zou Penghui Zhang Yang Zeng Yiping Xue Fangshi Gao Jianfeng Zhang Zheng and Geng Tao |
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| Institution: | State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China |
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| Abstract: | We have fabricated In0:53Ga0:47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing. The epitaxial layers of the RTD were grown on semi-insulating (100) InP substrates by molecular beam epitaxy. RTDs with a peak current density of 24.6 kA/cm2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated. |
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| Keywords: | RTD electron beam lithography air-bridge |
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