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Catalyst-free selective-area growth of vertically aligned zinc oxide nanowires |
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| Authors: | Shu-Te Ho Chiu-Yen Wang Hsiang-Lin Liu Heh-Nan Lin |
| Institution: | aDepartment of Materials Science and Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan;bDepartment of Physics, National Taiwan Normal University, Taipei 11677, Taiwan |
| Abstract: | An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor–solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates. |
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