Influences of thermal annealing, the electrolyte pH, and current density on the interface state density distribution of anodic MOS structures |
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Authors: | M Saglam A Türüt Ç Nuhoglu H Efeoglu T Kılıçoglu MA Ebeoglu |
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Institution: | (1) Atatürk University, Faculty of Science and Art, Department of Physics, Erzurum, Turkey (Fax: +90-442/2331062), TR;(2) University of Dicle, Faculty of Science and Art, Department of Physics, Diyarbakir, Turkey, TR;(3) University of Dumlupinar; Faculty of Engineering, Department of Electrical and Electronics, Kütahya, Turkey, TR |
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Abstract: | 2 /p-Si MOS structures were prepared in 0.1 M K2SO4 electrolyte with a pH of 7 (the 0.1 M KOH solution was buffered with H2SO4) at current densities of 3, 5, and 7 mA/cm2 and with four different pH values of the electrolyte at 3 mA/cm2. It is found that thermal annealing at a relatively low temperature can be used to improve the anodic MOS characteristics.
Moreover, of the pH and current density it followed that the pH has a dominant role in the interface electrical properties.
The lowest interface state densities at the maximum and the midgap positions are 7.1×1011 and 2.7×1010 eV-1cm-2 for a sample made with pH=7, J=3 mA/cm2. The characteristics of this sample seem satisfactory for device applications of anodized p-Si.
Received: 8 July 1996/Accepted: 22 January 1997 |
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Keywords: | PACS: 73 20 -r 73 20 At 73 40 Ns |
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