|
|||||
|
|
XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique |
|
| Authors: | Jarkko Ihanus, Eric Lambers, Paul H. Holloway, Mikko Ritala,Markku Leskel |
| Affiliation: | a Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, Helsinki FIN-00014, Finland b Department of Materials Science and Engineering, University of Florida, P.O. Box 116400, Gainesville, FL 32611-6400, USA |
| Abstract: | SrS1−xSex and ZnS1−xSex thin films were deposited by the atomic layer deposition (ALD) technique using elemental selenium as the Se source, thus avoiding use of H2Se or organometallic selenium compounds. X-ray diffraction (XRD) analysis showed that the films were solid solutions and X-ray photoelectron spectroscopy (XPS) data showed that the surface of both ZnS1−xSex and SrS1−xSex were covered with an oxide and carbon-containing contaminants from exposure to air. The oxidation of SrS1−xSex extended into the film and peak shifts from sulfate were found on the surface. Luminance measurements showed that emission intensity of the ZnS1−xSex:Mn alternating current thin film electroluminescent (ACTFEL) devices at fixed voltage was almost the same as that of the ZnS:Mn device, while emission intensity of the SrS1−xSex:Ce devices decreased markedly as compared to the SrS:Ce device. Emission colors of the devices were altered only slightly due to selenium addition. |
| Keywords: | A1. Solid solutions A1. X-ray photoelectron spectroscopy A3. Atomic layer deposition B1. Sulfides B2. Phosphors B3. Electroluminescent devices |
| 本文献已被 ScienceDirect 等数据库收录！ | |