| 双磁垒中电子的隧穿效应 |
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| 引用本文： | 曾以成.双磁垒中电子的隧穿效应[J].计算物理,2002,19(3):245-248. |
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| 作者姓名： | 曾以成 |
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| 作者单位： | 浙江大学生物医学工程系, 浙江 杭州 310027 |
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| 摘 要： | 采用平面波近似数值方法解非均匀磁场中电子的薛定谔方程,计算了在半导体异质结上沉积带状导电薄膜(通有电流)或I型超导材料产生的两种类型的双磁垒体系的电子隧道结构,以及相应的弹射(ballistic)电导,得知这两种体系的电子隧穿情形差异较大,而它们的电导结构却很相似.
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| 关 键 词： | 磁垒 隧穿效应 弹射电导 |
| 文章编号： | 1001-246X(2002)03-0245-04 |
| 收稿时间： | 1999-09-06 |
| 修稿时间： | 1999年9月6日 |
ELECTRONIC TUNNELING EFFECT THROUGH DOUBLE MAGNETIC BARRIERS |
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| ZENG Yi-cheng.ELECTRONIC TUNNELING EFFECT THROUGH DOUBLE MAGNETIC BARRIERS[J].Chinese Journal of Computational Physics,2002,19(3):245-248. |
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| Authors: | ZENG Yi-cheng |
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| Institution: | Department of Biomedical Engineering, Zhejiang University, Hangzhou 310027, P R China |
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| Abstract: | SchrÖidinger Equation of an electron in nonhomogeneous magnetic fields is solved by numerical methods with plane wave approximation. The electronic tunneling and the corresponding ballistic conductance of two double-magnetic-barrier systems created by the lithographic patterning of conducting stripes (drive current) or type Ⅰ superconducting films interrupted by stripes are studied. The results show that the tunneling structures in different systems are dissimilar but the ballistic conductances are strikingly similar. |
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| Keywords: | magnetic barrier tunneling effect ballistic conductance |
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