Charge carrier concentration in glasses. dependence on composition |
| |
Authors: | H J Schütt D Wienß M Doß |
| |
Institution: | 1. Universit?t Rostock, FB Physik, D-18051, Rostock, Germany
|
| |
Abstract: | Admittance spectra of the ion conducting glasses xNa2O(1−x)SiO2 and xK2O(1−x)SiO2,(x=0,1–0,3) have been studied on small signal conditions from room temperature to 713 K. Conductivity relaxation in the bulk
and space charge relaxation due to drift and diffusion near the electrodes were found in separated parts of the frequency
range 10−4–106 Hz. The data show Arrhenius behaviour for dc conductivity and conductivity relaxation. The determination of the charge carrier
concentration is based on the analysis of the beginning of space charge relaxation. The free carrier concentration, n0, were evaluated to be of the order of 1023 m−3 at temperatures 400 – 700 K and show a weak dependence on composition. The dominant factor determining conductivity was mobility
in these glasses. The strong temperature dependence of n0 below 400 K indicates changed conditions for the development of the space charge relaxation which are discussed.
Paper presented at the 1st Euroconference on Solid State Ionics, Zakynthos, Greece, 11–18 Sept. 1994. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|