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透射式GaAs光电阴极AlGaAs/GaAs外延层内应力的种类及其表征与测量
引用本文:李晓峰,张景文,高鸿楷,侯洵.透射式GaAs光电阴极AlGaAs/GaAs外延层内应力的种类及其表征与测量[J].光子学报,2002,31(1):88-92.
作者姓名:李晓峰  张景文  高鸿楷  侯洵
作者单位:中国科学院西安光学精密机械研究所光电子学研究室,西安,710068
摘    要:本文介绍了透射式GaAs光电阴极AlGaAs窗层和GaAs光电发射外延层内应力的种类及其表征方法和测量方法,另外还给出了相应的实例.

关 键 词:GaAs/AlGaAs  光电阴极  X射线衍射  应力  外延
收稿时间:2001/7/5
修稿时间:2001年7月5日

THE VARIETIES,REPRESENTATION AND MEASURING ON THE STRESSES OF AlGaAs/GaAs EPITAXIAL LAYER IN THE TRANSPARENT GaAs PHOTOCATHODE
Li Xiaofeng,Zhang Jingwen,Gao Hongkai,Hou Xun.THE VARIETIES,REPRESENTATION AND MEASURING ON THE STRESSES OF AlGaAs/GaAs EPITAXIAL LAYER IN THE TRANSPARENT GaAs PHOTOCATHODE[J].Acta Photonica Sinica,2002,31(1):88-92.
Authors:Li Xiaofeng  Zhang Jingwen  Gao Hongkai  Hou Xun
Institution:Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710068
Abstract:The stresses overall epitaxial wafer can be represented by the curvature radius of the wafer,furthermore the curvature radius of curved wafer can be measured by X-ray diffraction.This paper described the varieties,the presetation and measuring method of stresses on AlGaAs/GaAs epitaxial layer.Besides experimental data and analysing results were given in this paper .
Keywords:GaAs/AlGaAs  Photocathode  X-ray diffraction  Stress  Epitaxy
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