| 宽反射角DBR红光发光二极管 |
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| 引用本文： | 韩军,李建军,邓军,邢艳辉,于晓东,林委之,刘莹,沈光地.宽反射角DBR红光发光二极管[J].光电子．激光,2008,19(4):456-458. |
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| 作者姓名： | 韩军 李建军 邓军 邢艳辉 于晓东 林委之 刘莹 沈光地 |
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| 作者单位： | 北京市光电子技术实验室,北京工业大学,北京,100022 |
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| 基金项目： | 北京市科委高效高亮度单芯片半导体照明器件的研发与产业化资助项目 |
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| 摘 要： | 对用于提高AlGaInP红光发光二极管出光效率的传统DBR进行了分析,用MOCVD生长了包含对垂直入射光反射的DBR和对斜入射光反射的DBR复合在一起的红光LED,在20 mA注入电流下,LED的峰值波长为630 nm,轴向光强达到137 mcd,输出光功率为2.32 mW.与常规的LED相比,光强和输出光功率有很大的提高.
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| 关 键 词： | 红光发光二极管 分布布拉格反射镜 金属有机物化学气相沉积 |
| 文章编号： | 1005-0086(2008)04-0456-03 |
| 修稿时间： | 2007年5月18日 |
Wide reflected angle DBR red light LED |
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| HAN Jun,LI Jian-jun,DENG Jun,XING Yan-hui,YU Xiao-dong,LIN Wei-zhi,LIU Ying,SHEN Guang-di.Wide reflected angle DBR red light LED[J].Journal of Optoelectronics·laser,2008,19(4):456-458. |
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| Authors: | HAN Jun LI Jian-jun DENG Jun XING Yan-hui YU Xiao-dong LIN Wei-zhi LIU Ying SHEN Guang-di |
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| Institution: | HAN Jun,LI Jian-jun,DENG Jun,XING Yan-hui,YU Xiao-dong,LIN Wei-zhi,LIU Ying,SHEN Guang-di(Beijing Optoelectronic Technology Lab.Beijing University ofTechnology,Beijing,100022 China) |
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| Abstract: | We analyzed the conventional DBR which was used to increase the light extraction efficiency in AlGaInP red light LED.The coupled DBR LED with one DBR to reflect normal incidence light and one DBR to reflect inclined incidence light was grown by MOCVD.At 20 mA Dc injection current,the LED peak wavelength was 630 nm,the light intensity of on axis was 137 mcd,and the output light power was 2.32 mW.The light intensity and output light power were improved than conventional LED. |
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| Keywords: | Red LED DBR MOCVD |
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