Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation density |
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Authors: | Chengzhao Chen Linghong LiaoCheng Li Hongkai LaiSongyan Chen |
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Institution: | a Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, PR China b Department of Physics and Electronics Engineering, Hanshan Normal University, Chaozhou 521041, PR China |
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Abstract: | High-quality strain relaxed SiGe layer has been fabricated on Si using a thin Ge interlayer grown at 330 °C. The properties of SiGe layers with and without the low-temperature Ge interlayer are compared. The results indicate that the Ge interlayer plays an important role in the preparation of SiGe layer. The strain relaxed low-temperature Ge interlayer with coalesced island surface, acting as a stable and compliant template, could remove the cross-hatch misfit dislocation lines on surface and promote the strain relaxation in the SiGe layer homogeneously. |
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Keywords: | SiGe layer LT Ge Strain relaxation |
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