Crystallization and annealing effects of sputtered tin alloy films on electromagnetic interference shielding |
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| Authors: | Fei-Shuo HungFei-Yi Hung Che-Ming Chiang |
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| Institution: | a Department of Architecture, National Cheng Kung University, Tainan 701, Taiwan
b Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan |
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| Abstract: | Sn, Al and Cu not only possess electromagnetic interference (EMI) shield efficiency, but also have acceptable costs. In this study, sputtered Sn-Al thin films and Sn-Cu thin films were used to investigate the effect of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. The results show that Sn-xAl film increased the electromagnetic interference (EMI) shielding after annealing. For as-sputtered Sn-xCu films with higher Cu atomic concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu content possessed excellent EMI shielding at lower frequencies, but had an inverse tendency at higher frequencies. For both the Sn-xAl and Sn-xCu thin films after crystallization treatment, the sputtered films had higher electrical conductivity, however the EMI shielding was not enhanced significantly. |
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| Keywords: | Electromagnetic interference (EMI) Sn-Al Sn-Cu |
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