Properties of a-Si:H films deposited by RF magnetron sputtering at 95 °C |
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Authors: | D GirginoudiC Tsiarapas N Georgoulas |
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Institution: | Department of Electrical and Computer Engineering, Democritus University of Thrace, Building A’ E&CE, University Campus Xanthi-Kimmeria, 67100 Xanthi, Greece |
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Abstract: | In this work we have investigated the dependence of optical and electrical properties of RF sputtered undoped a-Si:H films and B or P doped a-Si:H films on hydrogen flow rate (FH). Low deposition temperature of 95 °C was used, a process compatible with low-cost plastic substrates. FTIR spectroscopy and ESR measurements were used for the investigation of Si-Hx bonding configurations, and concentrations of hydrogen and dangling bonds. We found that there is a strong correlation between the total hydrogen concentration, the dangling bonds density and the optoelectronic properties of the films. The best photosensitivity value was found to be 1.4 × 104 for the undoped films. The dark conductivity (σD) of the doped layers varied from 5.9 × 10−8 to 6.5 × 10−6 (Ω cm)−1 for different ratios FAr/FH. These variations are attributed to both the different B and P concentrations in the films (according to SIMS measurements) and the enhanced disorder of the films introduced by the large number of inactive impurities. The B doping efficiency is lower compared to the P one. A small photovoltaic effect is also observed in n-i-p solar cells fabricated on polyimide (PI) substrates having ITO as antireflective coating, with an efficiency of 1.54%. |
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Keywords: | 71 23 Cq 73 50 Pz 73 61 Jc |
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