Thickness study of Al:ZnO film for application as a window layer in Cu(In1−xGax)Se2 thin film solar cell |
| |
| Authors: | MMIslam S IshizukaA Yamada K MatsubaraS Niki T SakuraiK Akimoto |
| |
| Institution: | a Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
b National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan |
| |
| Abstract: | Structural, electrical and optical properties of Al doped ZnO (Al:ZnO) thin film of various thicknesses, grown by radio-frequency magnetron sputtering system were studied in relation to the application as a window layer in Cu(In1−xGax)Se2 (CIGS) thin film solar cell. It was found that the electrical and structural properties of Al:ZnO film improved with increasing its thickness, however, the optical properties degraded. The short circuit current density, Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the Al:ZnO window layer thickness. Best efficiency was obtained when CIGS solar cell was fabricated with electrically and optically optimized Al:ZnO window layer. |
| |
| Keywords: | Solar cell Cu(In1&minus xGax)Se2 Al:ZnO layer thickness Efficiency |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
