In-situ study of the diffusion-reaction mechanism in Mo/Si multilayered films |
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| Authors: | S. Bruijn R.W.E. van de KruijsA.E. Yakshin F. Bijkerk |
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| Affiliation: | a FOM Institute for Plasma Physics Rijnhuizen, P.O. Box 1207, 3430 BE Nieuwegein, The Netherlands
b MESA+ Institute for Nanotechnology, University Twente, Enschede, The Netherlands |
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| Abstract: | We present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100-275 °C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV. |
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| Keywords: | Diffusion Thin films Multilayers MoSi2 Interface X-ray diffraction Molybdenum Silicon |
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