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Negative capacitance of ZnGa2Se4/Si nano-heterojunction diode |
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| Authors: | I S Yahia G B Sakr S S Shenouda M Fadel S S Fouad F Yakuphanoglu |
| Institution: | 1. Nano-Science Labs., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt 2. Semiconductor Labs., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt 3. Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia 6. Nano-Science & Semiconductor Labs., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt 4. Thin Film Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt 5. Department of Physics, Faculty of Science, Firat University, Elazi?, Turkey |
| Abstract: | The negative capacitance (NC) behavior in p-ZnGa2Se4/n-Si nano-crystalline HJD was characterized by admittance-voltage method. The C–V, G–V and R s –V for the studied diode were analysed in the frequency range of 1–5 MHz and in the temperature range of 303–423 K. The capacitance and conductance plots were interpreted in terms of interface states and series resistance. The C–V and G/ω–V plots exhibit a pounced peak due to the interface states and the series resistance effects. The negative capacitance behavior in the studied diode can be explained in terms of the transient currents. |
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