Effects of moisture barriers on resistive switching in Pt-dispersed SiO2 nanometallic thin films |
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Authors: | Byung Joon Choi I-Wei Chen |
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Affiliation: | 1. Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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Abstract: | Moisture invasion into memory devices can result in data loss and malfunctions in write/erase switching. Deteriorated uniformity and retention characteristics, and distorted switching hysteresis loops, are observed in moisture-attacked Pt-dispersed SiO2 nanometallic thin-film devices, and can be effectively prevented by coating the device with a nanoscale Al2O3 barrier layer grown by an atomic layer deposition method. The moisture-attacked devices exhibit evidence of cumulating ion current and ion potential with repeated switching. In contrast, a capped device with an extremely uniform and reproducible resistive switching behavior features a completely symmetric current–voltage curve expected for a purely electronic device. |
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