Spin Hall effect in doped semiconductor structures |
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Authors: | Tse Wang-Kong Das Sarma S |
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Institution: | Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA. |
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Abstract: | In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as sigma(xy)SJ/sigma(xy)SS approximately (h/tau)/epsilonF, with tau being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining sigma(s)/sigma(c) approximately 10(-3)-10(-4), where sigma(s(c)) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. Science 306, 1910 (2004)] in n-doped 3D GaAs system. |
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