NASICON-based H2 Sensor Using CoCrMnO4 Insensitive Reference Electrode and Buried Au Sensing Electrode |
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Authors: | ZHANG Han SUN Ruize SUN Peng LIANG Xishuang LU Geyu |
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Affiliation: | State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China |
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Abstract: | This work focuses on the H2 sensing performance of the sensor with buried Au sensing electrode and spinel-type oxide CoCrMnO4 insensitive reference electrode within sodium super ionic conductor(NASICON) film. The sensor showed the highest response to H2 gas on the insensitive material sintering at 800 ℃. Compared with those of the traditional structure device, the sensitivity and selectivity of the sensor using buried sensing electrode were greatly improved, giving a response of -177 mV in 9×10-5 g/L H2, which was about 3.5 times higher than that of sensors with traditional structure. Moreover, the ΔV value of the sensing device exhibited linear relationship to the logarithm of H2 concentration and the sensitivity(slope) was -135 mV/decade. A sensing mechanism related to the mixed potential was proposed for the present sensor. |
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Keywords: | H2 sensor Sodium super ionic conductor(NASICON) Mixed potential Buried electrode Insensitive RE |
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