GaAs photonic crystal slab nanocavities: Growth,fabrication, and quality factor |
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| Authors: | J. Sweet B.C. Richards J.D. Olitzky J. Hendrickson G. Khitrova H.M. Gibbs D. Litvinov D. Gerthsen D.Z. Hu D.M. Schaadt M. Wegener U. Khankhoje A. Scherer |
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| Affiliation: | 1. College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, AZ 85721, United States;2. Laboratorium für Elektronenmikroskopie, Universität Karlsruhe (TH), Wolfgang-Gaede-Strasse 1, D-76131 Karlsruhe, Germany;3. Institut für Angewandte Physik and DFG-Center for Functional Nanostructures (CFN), Universität Karlsruhe (TH), Wolfgang-Gaede-Strasse 1, D-76131 Karlsruhe, Germany;4. Department of Electrical Engineering, California Institute of Technology, 1200 E California Blvd., Pasadena, CA 91125, United States |
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| Abstract: | In an effort to understand why short wavelength (～1000 nm) GaAs-based photonic crystal slab nanocavities have much lower quality factors (Q) than predicted (and observed in Si), many samples were grown, fabricated into nanocavities, and studied by atomic force, transmission electron, and scanning electron microscopy as well as optical spectroscopy. The top surface of the AlGaAs sacrificial layer can be rough even when the top of the slab is smooth; growth conditions are reported that reduce the AlGaAs roughness by an order of magnitude, but this had little effect on Q. The removal of the sacrificial layer by hydrogen fluoride can leave behind a residue; potassium hydroxide completely removes the residue, resulting in higher Qs. |
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