用显微拉曼扫描成象(mapping)法测集成电路中CoSi_2电极引起的应力 |
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引用本文: | 李碧波,黄福敏,张树霖,高玉芝,张利春. 用显微拉曼扫描成象(mapping)法测集成电路中CoSi_2电极引起的应力[J]. 光散射学报, 1997, 0(Z1) |
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作者姓名: | 李碧波 黄福敏 张树霖 高玉芝 张利春 |
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作者单位: | 北京大学物理系,北京大学微电子所 |
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摘 要: | 用显微拉曼扫描成象(mapping)法测集成电路中CoSi2电极引起的应力李碧波黄福敏张树霖(北京大学物理系北京100871高玉芝张利春(北京大学微电子所北京100871)StresInducedbyCoSi2GrownonPolycrystalin...
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Stress Induced by CoSi 2 Grown on Polycrystalline Si Measured By Micro Raman Spectroscopy |
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Abstract: | Abstract We have studied the stress in polycrystalline silicon due to CoSi 2 in the scale of μm by micro Raman spectroscopy. We found that the stress induced by CoSi 2 grown on the polycrystalline Si substrate was compressive stress. Relations between the magnitudes of the stress and the areas of the CoSi 2 films were studied. It was found that CoSi 2 film causes larger stress with smaller dimension. We also found that the stress on the boundary of the CoSi 2 film is of a different type to that at the center of the film, with twice the absolute magnitude of that at the center. |
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