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Properties of reactively sputtered Mo1−x O x films |
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| Authors: | F. C. T. So E. Kolawa S. C. W. Nieh X. -A. Zhao M. -A. Nicolet |
| Affiliation: | (1) California Institute of Technology, 91125 Pasadena, CA, USA;(2) Present address: Optoelectronics Division, Hewlett-Packard Co., 95131 San Jose, CA, USA;(3) Present address: Shanghai Institute of Metallurgy, Academy of Sciences of China, Shanghai, PR China |
| Abstract: | Molybdenum oxide (Mo1–xOx) films were prepared by reactive rf sputtering of a Mo target in O2/Ar plasma. The dependence of film properties on various sputtering parameters is investigated. The atomic percentage of oxygen (x) in the Mo1–xOx films decreases with sputtering power and increases with the partial pressure of oxygen. Mo1–xOx films that exhibit metallic conductivities can be obtained over a wide range of sputtering conditions. The intrinsic film stress of conducting Mo1–xOx is compressive. Such M1–xOx films were shown by backscattering spectrometry to be excellent diffusion barriers between Al and Si up to 600 °C annealing for 30 min. |
| Keywords: | 81.15.-z 81.60.Bb |
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