A spin field effect transistor for low leakage current |
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Authors: | S. Bandyopadhyay M. Cahay |
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Affiliation: | aDepartment of Electrical and Computer Engineering and Department of Physics, Virginia Commonwealth University, 601 W. Main Street, Richmond, VA 23284, USA;bDepartment of Electrical and Computer Engineering and Computer Science, University of Cincinnati, OH 45221, USA |
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Abstract: | In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the “off”-state, resulting in significant standby power dissipation. We can counter this effect of the magnetic field by engineering the Dresselhaus spin–orbit interaction in the channel with a backgate. For realistic device parameters, a nearly perfect cancellation is possible, which should result in a low leakage current. |
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Keywords: | Spintronics Spin field effect transistors Spin– orbit interaction |
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