The redox of hydroxyl-assisted metallic filament induced resistive switching memory based on a biomaterial-constructed sustainable and environment-friendly device |
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| Authors: | L Zheng B Sun Y Chen T Li S Mao S Zhu H Wang Y Zhang M Lei Y Zhao |
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| Institution: | 1. Key Laboratory of Advanced Technology of Materials (Ministry of Education), Superconductivity and New Energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu, Sichuan 610031, China;2. School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China;3. School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China;4. College of Physics and Energy, Fujian Normal University, Fuzhou 350117, China |
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| Abstract: | Using biomaterial-constructed resistive switching memory devices has attracted great attention for the potential application in advanced electronic components because of their variety of advantages, such as low cost, sustainability, environment-friendly, and so on. In this work, after a series of treatments, an edible mushroom as an intermediate insulating material was assembled into an Ag/biofilm/metal structure, in which the metals such as Al, Cu, Ag, and Ti were chosen as the bottom electrode to explore in-depth physical mechanisms. The transmission mechanism of resistive switching memory behavior in an Ag/biofilm/metal device was studied in detail. It was found that the redox of hydroxyl-assisted Ag filaments could be easily formed on an inactive metal bottom electrode through the mushroom film by redox reaction under applied voltage. This work provides an ingenious potential application in wearable, flexible, sustainable, and environment-friendly biologically resistive random-access memories. |
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| Keywords: | Biomaterials Redox Hydroxy Resistive switching Memory device |
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