End-Hall与APS离子源辅助沉积制备的薄膜特性

利用离子束辅助沉积(IAD)技术制备了单层HfO2薄膜,离子源分别为End-Hall与APS离子源。采用Lambda900分光光度计、可变角光谱椭圆偏振仪(V-VASE)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)、ZYGO干涉仪和激光量热计测试了薄膜的透射光谱、光学常数、晶体结构、表面形貌和吸收(1064nm)。实验结果表明,薄膜特性与辅助离子源及起始膜料有着密切的关系。End-Hall离子源辅助沉积制备的薄膜出现轻微的折射率不均匀性。两种离子源辅助沉积制备的薄膜折射率均较高,吸收损耗小,薄膜均为单斜晶相。不同离子源辅助沉积条件下,利用金属Hf为起始膜料制备的薄膜表面平整度较好,其均方根粗糙度和总积分散射均相对较小。与End-Hall离子源相比,APS离子源辅助沉积制备的薄膜吸收相对较小。

Properties of Thin Films Prepared with End-Hall and APS Ion Assisted Deposition

HfO2 thin films have been deposited by ion assisted deposition(IAD) with End-Hall and APS ion source respectively.Comprehensive characterization of these films such as transmittance spectra,optical constants,crystal structures,surface topography and absorption(1064 nm) have been studied via Lambda 900 spectrophotometer,variable angle spectroscopic ellipsometry(V-VASE),X-ray diffraction(XRD),scanning electron microscopy(SEM),ZYGO interferometer,and laser calorimeter.The results show that thin film properties...